Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures
نویسندگان
چکیده
منابع مشابه
Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures
The Au/DyMnO₃/Nb:SrTiO₃/Au stack was demonstrated to be not only a high performance memristor but also a good memcapacitor. The switching time is below 10 ns, the retention is longer than 10(5) s, and the change ratio of resistance (or capacitance) is larger than 100 over the 10(8) switching cycles. Moreover, this stack has a broad range of intermediate states that are tunable by the operating ...
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ژورنال
عنوان ژورنال: Scientific Reports
سال: 2013
ISSN: 2045-2322
DOI: 10.1038/srep02482